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A voltage controlled switching device

Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; T Lewin ; Andrei Vorobiev (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Martin Norling (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; John Berge (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik)
(2009)
[Patentansökan]

A capacitive device (100, 200) comprising first (110) and second (130) layers of electrically conductive material, each of which has a first and a second main surface. The device also comprises a third layer (120) of a paraelectric phase material between the first (110) and second (120) layers, so that one of said first or second surfaces of the first and second layers face the third layer. The device (100, 200) additionally comprises a non-conducting supporting structure (160) on which the device rests, and comprises means (DC) for applying a DC voltage across the third layer (160), so that the device by means of varying the applied DC voltage may be made to alter its electrical characteristics between that of a capacitor, a short circuit or an open circuit.



Denna post skapades 2009-12-17. Senast ändrad 2015-02-25.
CPL Pubid: 103980

 

Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)

Ämnesområden

Elektroteknik och elektronik
Teknisk fysik

Chalmers infrastruktur