CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

A 110 GHz GaAs Schottky Diode Mixer on Quartz with planar LO feed

Peter Sobis (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Jan Stake (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; Anders Emrich
Gigahertz, Uppsala Sweden, November 8-9 2005 (2005)
[Konferensbidrag, refereegranskat]

A fixed-tuned 110 GHz subharmonically pumped GaAs schottky diode mixer design with planar LO feeding is presented. The design consists of a shielded microstrip circuit on a 5 mil thick quartz substrate, mounted in a full height WR-08 RF waveguide split block design. The UMS DBES105a diode series pair is used as a non-linear mixing element and substrate vias are used for the IF/DC ground return. The planar microstrip circuitry, waveguide interface and diode chip have been modeled and simulated in HFSS. Simulated results are showing a conversion loss of 10 dB, with less than 7 dBm LO power, with RF and LO bandwidths of more than 10%. Simulations will be verified with experimental results.

Nyckelord: GaAs schottky diode mixer, subharmonic, heterodyne systems, millimeterwave, submillimeter, THz front-ends, fixed-tuned, radiometers

Denna post skapades 2006-08-29. Senast ändrad 2014-09-02.
CPL Pubid: 10344


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik



Chalmers infrastruktur