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Ferroelectric thin-film based two-dimensional electromagnetic bandgap structures

U. Khan ; G. Subramanyam ; Spartak Gevorgian (Institutionen för mikroteknologi och nanovetenskap) ; A. Vorobiev
Integrated Ferroelectrics (10584587 ). Vol. 86 (2006), 1, p. 67-76.
[Artikel, refereegranskad vetenskaplig]

A two-dimensional electromagnetic bandgap structure has been developed using ferroelectric thin-films. Using lumped inductors and parallel plate capacitors a planar structure is developed which creates a bandgap in the 20-40 GHz range, as demonstrated by experimental results. The ferroelectric material Ba0.6Sr0.4TiO3 (BST) is used in the form of a thin-film between patterned layers of gold to form capacitors on a 500 m thick high-resistivity Si substrate. A meander line based design is used to form the two-dimensional surface which provides biasing pathways to the varactors. The concept is simulated and experimentally verified using a coplanar waveguide based device in which the EBG surface is used as the ground plane. Designs are also presented for the development of a biasing network to take advantage of the non-linear tunability of the BST dielectric constant in order to make the surface tunable. Experiments used both sputtered and PLD BST films with a maximum bandgap depth of 35 dB. Potential applications are in the area of frequency selective surfaces, and high-impedance ground planes.



Denna post skapades 2009-12-04.
CPL Pubid: 102772

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur