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Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?

Jonas Berg (Institutionen för mikroelektronik, Fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för mikroelektronik, Fasta tillståndets elektronik) ; Per Lundgren (Institutionen för mikroelektronik, Fasta tillståndets elektronik)
7th MELARI/NID workshop (2001)
[Konferensbidrag, övrigt]

The use of molecular resonant tunneling diodes (RTDs) for use as local refresh of low-power DRAM cells has been studied. A pair of RTDs connected to the cell forms a latch that provides local refresh. This reduces the standby power of the cell, as the refresh operation is very power consuming. In this work, we compare the demands of future DRAM generations with the electrical properties of published molecules showing negative differential resistance. Simulations show that no one of the so far published molecular RTDs, other low-current RTDs made in SiGe, or III-V-materials fulfill these requirements. The simulations show that the focus of molecule development should be to find molecules with resonance for lower applied voltages and with lower current levels in general. The issues of maximum tolerable series resistance in the connection between the molecules and the silicon, and the maximum tolerable fluctuations in the number of attached molecules are also addressed.


7th MELARI/NID workshop, Barcelona, Spain. 7-9 February 2001.



Denna post skapades 2006-09-19. Senast ändrad 2015-12-17.
CPL Pubid: 10253

 

Institutioner (Chalmers)

Institutionen för mikroelektronik, Fasta tillståndets elektronik (1997-2003)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur