CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Semiconductor nanogaps for the fabrication of molecular electronic devices

Neil Greenham ; Pier Sazio ; Patrick See ; SN Chin ; David Ginger ; Chris Ford ; Jonas Berg (Institutionen för mikroelektronik, Fasta tillståndets elektronik) ; Per Lundgren (Institutionen för mikroelektronik, Fasta tillståndets elektronik) ; Stefan Bengtsson (Institutionen för mikroelektronik, Fasta tillståndets elektronik)
6th European Conference on Molecular Electronics (2001)
[Konferensbidrag, övrigt]

Recent results from the groups of Reed and Heath have shown that it is possible to obtain negative differential resistance and memory effects in molecular electronic devices by depositing electrodes on top of monolayers of organic molecules. For integration with existing technology, however, it is preferable to deposit molecules into nanometre-sized gaps preformed on a substrate. We have developed new methods to produce these gaps without the need to perform lithography at the nanometre scale. The nanometre spacing is defined by the vertical thickness of the oxide layer in a metal-oxide-semiconductor structure, or by the height of an insulating layer in an MBE-grown semiconductor heterostructure. Selective removal of the insulating layer provides a gap into which semiconductor nanocrystals or conjugated molecules may be assembled. We present characterisation of the semiconductor nanogaps, and initial electrical measurements on semiconductor nanocrystals deposited in the gaps.


6th European Conference on Molecular Electronics (ECME), Kerkrade, The Netherlands. 12-16 September 2001.



Denna post skapades 2006-09-19. Senast ändrad 2015-12-17.
CPL Pubid: 10252

 

Institutioner (Chalmers)

Institutionen för mikroelektronik, Fasta tillståndets elektronik (1997-2003)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur