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Measurement of the shot noise in a single-electron transistor

Sergey Kafanov (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik) ; Per Delsing (Institutionen för mikroteknologi och nanovetenskap, Kvantkomponentfysik)
Physical Review B. Condensed Matter and Materials Physics (1098-0121). Vol. 80 (2009), 15, p. 155320.
[Artikel, refereegranskad vetenskaplig]

We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

Nyckelord: Quantum-Noise, Limit, Oscillations, Charge Sensitivity, Tunnel-Junctions, Coulomb Blockade, Hanbury-Brown, Suppression



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Denna post skapades 2009-11-16. Senast ändrad 2016-07-07.
CPL Pubid: 101718

 

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