CPL - Chalmers Publication Library
| Utbildning | Forskning | Styrkeområden | Om Chalmers | In English In English Ej inloggad.

Through silicon vias filled with planarized carbon nanotube bundles

Teng Wang (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem) ; Kjell Jeppson (Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik) ; Niklas Olofsson ; Eleanor E B Campbell ; Johan Liu (Institutionen för mikroteknologi och nanovetenskap, Bionanosystem)
Nanotechnology (0957-4484). Vol. 20 (2009), 48, p. 485203.
[Artikel, refereegranskad vetenskaplig]

The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planarized by a combined lapping and polishing process to achieve both a high removal rate and a fine surface finish. Electrical tests of the CNT TSVs have been performed and their electrical resistance was found to be in the few hundred ohms range. The reasons for the high electrical resistance have been discussed and possible methods to decrease the electrical resistance have been proposed.



Denna post skapades 2009-11-12. Senast ändrad 2016-07-01.
CPL Pubid: 101612

 

Läs direkt!


Länk till annan sajt (kan kräva inloggning)


Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Bionanosystem (2007-2015)
Institutionen för mikroteknologi och nanovetenskap, Fysikalisk elektronik (2007-2010)
Institutionen för fysik (GU) (GU)

Ämnesområden

Elektroteknik och elektronik

Chalmers infrastruktur