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MOSFET Modeling Adapted for Switched Applications Using a State-Space Approach and Internal Capacitance Characterization

Andreas Karvonen (Institutionen för energi och miljö, Elteknik) ; Torbjörn Thiringer (Institutionen för energi och miljö, Elteknik)
PEDS 2009 - The Eighth International Conference on Power Electronics and Drive Systems November 2-5, 2009, Taipei, Taiwan, R.O.C p. 1107-1112. (2009)
[Konferensbidrag, refereegranskat]

This paper presents a new approach to MOSFET modeling using a state-space technique. The model is based on discrete elements whose values are extracted from measurements, datasheet parameters and SPICE® equations. The switching characteristics of the component are strongly determined by the gate-drain capacitance (CGD). With help of thorough impedance measurements, characterization of this capacitance as a function of the applied external voltages is possible. Simulations and measurements show good agreement and the model gives possibilities for e.g. controller design thanks to the state-space implementation.

Denna post skapades 2009-10-28. Senast ändrad 2017-10-03.
CPL Pubid: 100939


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Institutioner (Chalmers)

Institutionen för energi och miljö, Elteknik (2005-2017)



Chalmers infrastruktur