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Design and analysis of high-power InP-based heterostructure barrier varactor multipliers

T. Arezoo Emadi (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik)
Microwave and Optical Technology Letters (0895-2477). Vol. 50 (2008), 4, p. 1017-1022.
[Artikel, refereegranskad vetenskaplig]

The heterostructure barrier varactor design method aims at finding optimum epitaxial layer structure and device geometry to improve the diode power handling capability. The nonlinear thermal resistance of the HBV and an empirical expression introducing the leakage current are proposed and added to the electro-thermal HBV model. Finally, the HBV model is used to simulate various devices. (C) 2008 Wiley Periodicals, Inc.

Nyckelord: frequency multiplier, heterostructure barrier varactor, high-power, applications, EFFICIENCY, MODEL



Denna post skapades 2009-10-20.
CPL Pubid: 100384

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Fysik

Chalmers infrastruktur