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Large signal evaluation of nonlinear HBT model

Iltcho Angelov (Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik) ; A. Inoue ; S. Watanabe
IEICE TRANSACTIONS ON ELECTRONICS (0916-8524 ). Vol. E91C (2007), 7, p. 1091-1097.
[Konferensbidrag, refereegranskat]

The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.

Nyckelord: HBT, large signal model, bipolar transistor models, nonlinear circuits



Denna post skapades 2009-10-20. Senast ändrad 2009-10-20.
CPL Pubid: 100369

 

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Institutioner (Chalmers)

Institutionen för mikroteknologi och nanovetenskap, Mikrovågselektronik

Ämnesområden

Fysik

Chalmers infrastruktur